Part # NN-ENE-T300(1 , 10,100)

Price: $1050.00

Encapsulated NanoElectrode
Technical Data Typical Range
Needle Material Ag2Ga NA
Needle Length (µm) 1 0.5 - 3
Needle Angle 12° 7° - 15°
Diameter of the Encapsulated Needle (nm) 50 25 - 100
Needles Electrical Resistivity (Ωm) 1.05×10-7 1 - 1.1 ×10-7
Insulation material Parylene NA
Insulation coating thickness (nm) 100 Per request, various coating thickness is offered

AFM Cantilever Specifications
Technical Data Typical Range
Force Constant (N/m) 40 25 - 75
Resonance Freq. ( kHz) 300 200 - 400
Cantilever Length (µm) 125 115 - 145
Cantilever Mean Width (µm) 40 35 - 45
Cantilever Thickness (µm) 4.0 3.5 - 4.5
Cantilever Shape
Rectangular / Trapezoidal
Number of Cantilevers 1 per chip
Tip Height (µm) 14 ( not including needle )
Tip Offset (µm) 15 - 25
Cantilever and Chip Material Single Crystal Silicon
Chip Size
(industry standard)
3400 µm (L) x 1600 µm (W) x 300 µm (T)
Coating Gold reflex (on non-tip side)
Number of AFM probes 10 AFM probes


NaugaNeedles Encapsulated NanoElectrodes (ENE)

By coating a conformal layer of insulating material on the NeedleProbes, NaugaNeedles offers Encapsulated NanoElectrode (ENE). One of the main application of the ENE probes is for scanning gate microscopy (SGM) to study nano-devices (e.g. graphene based devises for field effect transistors, GFET).
Figure 1a shows the schematic of a experimental setup to measure electrical transport through graphene using ENE with AFM. Figure 1b,c shows SEM images of an ENE probe. A biased ENE in contact mode is used as a local top gate. Electrical transport through graphene at various backgate voltages is monitored as functions of tip voltage and tip position.

As one example for the ENE probes application, scientist at Purdue University have discovered that near the Dirac point, the response of graphene resistance to tip voltage shows significant variation with tip position and SGM imaging displays mesoscopic domains of electron-doped and hole-doped regions. These measurements reveal substantial spatial fluctuation in the carrier density in graphene due to extrinsic local doping from sources such as metal contacts, edges of graphene, structural defects and resist residues. click here for more info...

Figure 1. (a) Schematic of the experimental set up for contact mode scanning gate microscopy (SGM) on graphene. (b) SEM image of an ENE. (c) Magnified view of the end of the ENE, showing a conductive Ag2Ga nanowire surrounded by parylene (dielectric) coating.