Exposed End NeedleProbe With Platinum tip

NN-EENP
Exposed End NeedleProbe(NP)
Applications: Applications: KPFM, EFM, C-AFM, SGM, CFM in Liquid Media, AFM-SECM

Starting from

$950.00

Specs: 13 KHz, 0.2 N/m AFM cantilever. Conductive tip made of Pt, Thermal Evaporation of Parylene “C” coating= 300 nm

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Tip specification
Technical DataTypicalRange
Tip radius200 nm150 -300 nm
Tip materialPtNA
Insulation materialParyleneNA
Insulation coating thickness300 nm200 to 400 nm (customer choice)
Background current leakage<10 pA0-10 pA
Diffusion-limited value on CV measurement1 nA0.1 to 5 nA
Exposed End NeedleProbe specification
Technical DataTypicalRange
Needle MaterialAg2GaNA
Needle Length5 µm3-7 µm
Needle Angle12°7°-15°
Diameter of the exposed Needle100 nm50 – 150 nm
Needles Electrical Resistivity1.05×10-7 Ωm1 – 1.1 ×10-7 Ωm
Tip radius25 nm10 -50 nm
Tip materialPtNA
Insulation materialParyleneNA
Insulation coating thickness300 nm200 to 400 nm (customer choice)
Background current leakage<10 pA0-10 pA
Diffusion-limited value on CV measurement1 nA0.1 to 5 nA
Exposed End NeedleProbe specification
Technical DataTypicalRange
Needle MaterialAg2GaNA
Needle Length10 µm8-12 µm
Needle Angle12°7°-15°
Diameter of the exposed Needle100 nm50 – 150 nm
Needles Electrical Resistivity1.05×10-7 Ωm1 – 1.1 ×10-7 Ωm
Tip radius25 nm10 -50 nm
Tip materialPtNA
Insulation materialParyleneNA
Insulation coating thickness300 nm200 to 400 nm (customer choice)
Background current leakage<10 pA0-10 pA
Diffusion-limited value on CV measurement1 nA0.1 to 5 nA
AFM Cantilever Specifications
Technical DataTypicalRange
Force Constant0.2 N/m0.07 – 0.4 N/m
Resonance Freq.13 kHz9 – 17 kHz
Cantilever Length450 μm440 – 460 μm
Cantilever Mean Width50 μm45 – 55 μm
Cantilever Thickness2.0 μm1.0 – 3.0 μm
Cantilever Shape Cross-sectionRectangular / Trapezoidal
Number of Cantilevers1 per chip
Tip Height14 μm ( not including needle )
Tip Offset15 – 25 μm
Needle MaterialAg2Ga
Cantilever and Chip MaterialSingle Crystal Silicon
Chip Size (industry standard)3400 μm (L) x 1600 μm (W) x 300 μm (T)
CoatingGold reflex (on non-tip side)
Number of AFM probes5 AFM probes
Tip specification
Technical DataTypicalRange
Tip radius200 nm150 -300 nm
Tip materialPtNA
Insulation materialParyleneNA
Insulation coating thickness300 nm200 to 400 nm (customer choice)
Background current leakage<10 pA0-10 pA
Diffusion-limited value on CV measurement1 nA0.1 to 5 nA
Exposed End NeedleProbe specification
Technical DataTypicalRange
Needle MaterialAg2GaNA
Needle Length5 µm3-7 µm
Needle Angle12°7°-15°
Diameter of the exposed Needle100 nm50 – 150 nm
Needles Electrical Resistivity1.05×10-7 Ωm1 – 1.1 ×10-7 Ωm
Tip radius25 nm10 -50 nm
Tip materialPtNA
Insulation materialParyleneNA
Insulation coating thickness300 nm200 to 400 nm (customer choice)
Background current leakage<10 pA0-10 pA
Diffusion-limited value on CV measurement1 nA0.1 to 5 nA
Exposed End NeedleProbe specification
Technical DataTypicalRange
Needle MaterialAg2GaNA
Needle Length10 µm8-12 µm
Needle Angle12°7°-15°
Diameter of the exposed Needle100 nm50 – 150 nm
Needles Electrical Resistivity1.05×10-7 Ωm1 – 1.1 ×10-7 Ωm
Tip radius25 nm10 -50 nm
Tip materialPtNA
Insulation materialParyleneNA
Insulation coating thickness300 nm200 to 400 nm (customer choice)
Background current leakage<10 pA0-10 pA
Diffusion-limited value on CV measurement1 nA0.1 to 5 nA
AFM Cantilever Specifications
Technical DataTypicalRange
Force Constant0.2 N/m0.07 – 0.4 N/m
Resonance Freq.13 kHz9 – 17 kHz
Cantilever Length450 μm440 – 460 μm
Cantilever Mean Width50 μm45 – 55 μm
Cantilever Thickness2.0 μm1.0 – 3.0 μm
Cantilever Shape Cross-sectionRectangular / Trapezoidal
Number of Cantilevers1 per chip
Tip Height14 μm ( not including needle )
Tip Offset15 – 25 μm
Needle MaterialAg2Ga
Cantilever and Chip MaterialSingle Crystal Silicon
Chip Size (industry standard)3400 μm (L) x 1600 μm (W) x 300 μm (T)
CoatingGold reflex (on non-tip side)
Number of AFM probes5 AFM probes

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